Anodic Sb2S3 electrodeposition from a single source precursor for resistive random-access memory devices

• For the first time, Sb 2 S 3 was electrodeposited from a single source precursor at anodic potentials in non-acidic electrolyte. The voltammetry of [SbS 4 ] 3− anion explored. A pulsed electrodeposition allowed for film free by-product. demonstrated to be suitable RRAM applications. In this paper we report use Na ].9H O as aqueous electrolyte pH 9.1. We present electrochemistry and redox processes observed deposited film. show that an amorphous can by onto glassy carbon by-product accompanies deposition avoided using pulse plating approach. Raman spectroscopy grazing incidence X-ray diffraction were used characterise deposits good quality crystalline films are produced on annealing. screened application Resistive Random-Access Memory, it display typical bipolar resistive switching behaviour, resistance ratio between high state low is approximately one order magnitude 1.5 V, which sufficient memory mechanism also proposed.